Effect of CVD parameters on large area growth of highly crystalline MoS2 thin flakes

Nguyen Van Tu; Pham Van Trinh; Nguyen Van Chuc; Vu Dinh Lam; Phan Ngoc Minh

doi:10.51316/jca.2021.128

Authors

Nguyen Van Tu Institute of Materials Science, Vietnam Academy of Science and Technology, Hanoi, VIETNAM Author
Pham Van Trinh Institute of Materials Science, Vietnam Academy of Science and Technology, Hanoi, VIETNAM Author
Nguyen Van Chuc Institute of Materials Science, Vietnam Academy of Science and Technology, Hanoi, VIETNAM Author
Vu Dinh Lam Graduate University of Sciences and Technology, Vietnam Academy of Science and Technology Author
Phan Ngoc Minh Graduate University of Sciences and Technology, Vietnam Academy of Science and Technology Author

DOI:

https://doi.org/10.51316/jca.2021.128

Keywords:

MoS2, chemical vapor deposition, field effect transistor

Abstract

In this study, we presented a report on effect of growth parameters (seeding promoter, growth temperature, Ar gas flow rate) on the formation of MoS₂ monolayer. The morphology and structure of as-grown MoS₂ were investigated in detail by optical microscopy, atomic force microscopy, Raman and photoluminesence spectroscopy techniques. The results showed that a highly reproducible growth of dense MoS₂ triangular flakes with the size of ~35 µm over large area (~1.5x1 cm²) can be obtained by using a optimized parameters. The MoS₂ field effect transistors based on the as-grown MoS₂ exhibited carrier mobility of 0.5–2 cm²V⁻¹s⁻¹ and On/Off ratio of ~10⁴. Our results can provide a useful information to realize large area, high quality of MoS₂ for real electronic applications.

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References

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Nat. Nanotechnol. 6(3) (2011) 147-150. http://doi.org/10.1038/nnano.2010.279

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, A. Kis, Nat. Nanotechnol. 8(7) (2013) 497-501. http://doi.org/10.1038/nnano.2013.100

T. Pham, G. Li, E. Bekyarova, M.E. Itkis, A. Mulchandani, ACS Nano 13(3) (2019) 3196-3205 http://doi.org/10.1021/acsnano.8b08778

E. Singh, P. Singh, K.S. Kim, G.Y. Yeom, H.S. Nalwa, ACS Appl. Mater. Interfaces 11(12) (2019) 11061-11105. http://doi.org/10.1021/acsami.8b19859

S. Bertolazzi, J. Brivio, A. Kis, ACS Nano 5(12) (2011) 9703-9709. http://doi.org/10.1021/nn203879f

J.N. Coleman, M. Lotya, A. O’Neill, S.D. Bergin, P.J. King, U. Khan, K. Young, A. Gaucher, S. De, R.J. Smith, I.V. Shvets, S.K. Arora, G. Stanton, H.-Y. Kim, K. Lee, G.T. Kim, G.S. Duesberg, T. Hallam, J.J. Boland, J.J. Wang, J.F. Donegan, J.C. Grunlan, G. Moriarty, A. Shmeliov, R.J. Nicholls, J.M. Perkins, E.M. Grieveson, K. Theuwissen, D.W. McComb, P.D. Nellist, V. Nicolosi, Science 331(6017) (2011) 568-571. http://doi.org/10.1126/science.1194975

H. Liu, L. Chen, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, D.W. Zhang, Nano Res. 13(6) (2020) 1644-1650. http://doi.org/10.1007/s12274-020-2787-8

D. Dumcenco, D. Ovchinnikov, K. Marinov, P. Lazić, M. Gibertini, N. Marzari, O.L. Sanchez, Y.-C. Kung, D. Krasnozhon, M.-W. Chen, S. Bertolazzi, P. Gillet, A. Fontcuberta i Morral, A. Radenovic, A. Kis, ACS Nano 9(4) (2015) 4611-4620. http://doi.org/10.1021/acsnano.5b01281

Y. Zhan, Z. Liu, S. Najmaei, P.M. Ajayan, J. Lou, Small 8(7) (2012) 966-971. http://doi.org/10.1002/smll.201102654

R. Laishram, S. Praveen, M. Guisan, P. Garg, J.S. Rawat, C. Prakash, Integr. Ferroelectr 194(1) (2018) 16-20. http://doi.org/10.1080/10584587.2018.1514889

R. Guan, J. Duan, A. Yuan, Z. Wang, S. Yang, L. Han, B. Zhang, D. Li, B. Luo, CrystEngComm 23(1) (2021) 146-152. http://doi.org/10.1039/D0CE01354D

Y.-C. Lin, W. Zhang, J.-K. Huang, K.-K. Liu, Y.-H. Lee, C.-T. Liang, C.-W. Chu, L.-J. Li, Nanoscale 4(20) (2012) 6637-6641. http://doi.org/10.1039/C2NR31833D